Therefore we have to use it atleast 20% below from its absolute maximum ratings.) because the BC547 transistor cannot drive load of more than 80mA so in this condition we cannot use BC547 in place of S8050 and we have to find some other alternatives. Moreover the transition frequency of BC547 is 300MHz which is higher than the transition frequency of 100MHz due to which you cannot replace them in RF circuits which works above 100MHz.Īgain in this condition if the S8050 is used as an amplifier then there will not be much difference and you can use them interchangeably but when used as a switch then there is only one condition when you cannot use BC547 in place of S8050 when the load is above 80mA (Note: As you can see in the chart the BC547 collector current is 100mA but it is the absolute maximum rating of the transistor and we cannot use a transistor to its absolute maximum ratings because it makes stress on the transistor which may cause permanent damage of the transistor or weak its performance. But if BC547 is driving a load higher then 25V then you cannot replace it with S8050. If that voltage is under 20V (S8050 collector to emitter voltage is 25V but we cannot use a transistor to its absolute maximum ratings because this makes stress on the transistor) then you can easily replace it and more of the circuit in which these transistor are used are usually 12V or under 12V. So if you are using it in an amplifier circuit then there will be not much difference and you can use them interchangeably but if you want to use it as a switch then first you have to check the load voltage or how much voltage the load requires. Ratings & Characteristics Comparison : Ratings & CharacteristicsĪs we can see in the ratings and characteristics chart above the collector to emitter voltage of S8050 is 25V, collector current is 1500mA, Total device dissipation is 1000mW, max DC current gain is 300 and transition frequency (fT) is 100MHz while the BC547’s collector to emitter voltage is 45V, collector current is 100mA, total device dissipation is 625mW, max DC current gain is 800 and transition frequency is 300MHz. Therefore when a replacement condition is match then you have to change the face of the transistor to opposite side. The S8050 transistor’s first pin is “Emitter” second is “Base” and third is “Collector” and the BC547 transistor’s first pin is “Collector”, second is “Base” and third is “Emitter”. *This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.When looking at the pin comparison chart of these transistors we can see that both have different pinouts. It is commonly used in low-power amplification and switching applications and is a good replacement for S8050. PN2222A: This is another widely used NPN transistor with a maximum current rating of 600mA and a maximum voltage rating of 40V. It is commonly used in low-power amplification and switching applications and is a good replacement for S8050.īC547: This is another widely used NPN transistor with a maximum current rating of 100mA and a maximum voltage rating of 45V. Here are some possible replacements for S8050:ĢN3904: This is a widely used NPN transistor with a maximum current rating of 200mA and a maximum voltage rating of 40V. S8050 is a general-purpose NPN transistor commonly used in low-power amplification and switching applications. It is typically used in low-power applications such as signal amplification, small signal switching, and voltage regulation.ĭue to its low cost and availability, the S8050 transistor is a popular choice for hobbyists, students, and electronic enthusiasts for various DIY projects and experimentation. The S8050 transistor has a maximum collector current rating of 700mA, a maximum collector-emitter voltage rating of 20V, and a maximum power dissipation rating of 625mW. It is manufactured by multiple semiconductor companies, including Fairchild, ON Semiconductor, and STMicroelectronics. S8050 is a general-purpose NPN transistor commonly used in electronic circuits as a switching or amplifying device. TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR
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